FIELD: manufacturing technology.
SUBSTANCE: invention relates to the methods for producing epitaxial thin-film materials, namely films of europium monoxide on graphene, and it can be used to create such spintronics devices as a spin transistor and an injector of spin-polarized carriers. Method of growing europium monoxide EuO epitaxial films on graphene involves the formation of a europium submonolayer with a surface phase (√3 × √3) by molecular beam epitaxy on the surface of a preformed graphene monolayer structure/substrate at the substrate temperature Ts=20–100 °C and pressure of the flow of atoms of europium PEu=(1⋅10-8–1⋅10-7) Torr, deposition of a layer of europium monoxide EuO at the temperature of the substrate Ts=20–100 °C, pressure of oxygen flow PO2=(1⋅10-9–1⋅10-8) Torr and pressure flux of europium atoms PEu=(1⋅10-8–1⋅10-7) Torr, satisfying condition 10⋅PO2≤PEu≤11⋅PO2, to achieve the required layer thickness of europium monoxide EuO. In one of the embodiments of the invention after the above operations, a layer of europium monoxide EuO is deposited at the temperature of the substrate Ts=340–420 °C, oxygen flow pressure PO2=(1⋅10-9–1⋅10-8A) Torr and pressure flux of europium atoms PEu=(1⋅10-8–1.5⋅10-7A) Torr satisfying condition 10⋅PO2≤PEu≤15⋅PO2, to achieve the required total thickness of the layer of europium monoxide EuO. In particular cases of carrying out the invention after deposition of a film of europium monoxide, it is annealed in vacuum within the temperature range of Ts=490–520 °C.
EFFECT: formation of epitaxial stoichiometric films of europium monoxide with the thickness of more than 5 nm with high crystalline perfection without inclusions of phases of higher oxides on graphene is obtained, which allows to obtain magnetic states in graphene to create such technical devices as a single-electron transistor and a spin filter.
4 cl, 4 dwg, 4 ex
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Authors
Dates
2019-02-22—Published
2018-06-05—Filed