ELECTROPHOTOGRAPHIC LIGHT-SENSITIVE CELL, CARTRIDGE AND ELECTROPHOTOGRAPHIC DEVICE Russian patent published in 2015 - IPC G03G5/06 

FIELD: electricity.

SUBSTANCE: this invention is referred to electrophotographic light-sensitive cell, cartridge and electrophotographic device having the above electrophotographic light-sensitive cell. The claimed group of inventions include cartridge comprised of electrophotographic light-sensitive cell and at least one unit selected from the group consisting of a charging unit, developing unit, transferring unit and cleaning unit entirely supported in it, at that cartridge can be attached to a case of the electrophotographic device and detached from it. At that electrophotographic light-sensitive cell comprises a laminated body and hole transfer layer formed at the laminated body, moreover the laminated body includes substrate, electron transfer layer with thickness of d1 [mcm] formed at the substrate and charge generating layer with thickness of d2 [mcm] formed at electron transfer layer, at that the laminated body meets the following expressions (2) and (4): |Vl2(B)-Vl1(B)|≤0.35 (2) and 0.10≤|(Vd2(B)-Vl3(B))/Vd2(B)|≤0.20 (4), where in the expressions (2) and (4) Vl1(B) represents potential for surface of the charge generating layer at charge of the layer surface so that surface has potential Vd1 [V] represented by the following expression (1): Vd1(V)=-50 (V per thickness unit (mcm))×(d1(mcm)+d2(mcm)) (1), and at radiation with light of surface of the charge generating layer having potential Vd1 with interval of 0.18s upon radiation, at that light intensity is regulated so that potential of the surface drops per 20% in regard to Vd1 [V] at radiation of the charge generating layer with interval of 0.20s upon radiation; Vl2(B) represents potential for surface of the charge generating layer at surface charging so that potential of this surface is Vd1 [V] and at radiation with light of surface of the charge generating layer having potential Vd1 with interval of 0.22s upon radiation, and Vl3(B) represents potential for surface of the charge generating layer at charging of surface of the charge generating layer so that surface has potential Vd2 [V] represented by the following expression (3): Vd2(V)=-30 (per thickness unit (mcm))×(d1(mcm)+d2(mcm)) (3), and at radiation with light of surface of the charge generating layer having potential Vd2 with interval of 0.20s upon radiation.

EFFECT: provision of electrophotographic light-sensitive cell with suppression of positive ghost and suppression of reduced charging capability upon multiple usage, and in provision of cartridge and electrophotographic device having such electrophotographic light-sensitive cell.

11 cl, 8 dwg, 14 tbl