METHOD OF FABRICATING THIN-FILM RESISTORS Russian patent published in 2015 - IPC H01C17/00 

FIELD: electricity.

SUBSTANCE: method of fabricating thin-film resistors includes sequential sputtering of resistive and conductive films onto the dielectric substrate, formation of resistors micropattern by photolithographic technique with subsequent high-temperature processing by infrared radiation at temperature of resistive film crystallisation. High-temperature processing is carried out in the short run in vacuum during 15-30 minutes, thereupon temperature stabilisation in air is carried out at temperature of 220±30°C during 15-35 minutes. High-temperature processing in vacuum is performed at pressure P = (1·10^-5-5·10^-6) mm hg.

EFFECT: improved stability of the resistive component, expanded range of operating temperature for the sensor during operation and high measurement accuracy of pressure sensor during long time of its operation.

2 cl, 1 tbl