FIELD: electricity.
SUBSTANCE: method of fabricating thin-film resistors includes sequential sputtering of resistive and conductive films onto the dielectric substrate, formation of resistors micropattern by photolithographic technique with subsequent high-temperature processing by infrared radiation at temperature of resistive film crystallisation. High-temperature processing is carried out in the short run in vacuum during 15-30 minutes, thereupon temperature stabilisation in air is carried out at temperature of 220±30°C during 15-35 minutes. High-temperature processing in vacuum is performed at pressure P = (1·10-5-5·10-6) mm hg.
EFFECT: improved stability of the resistive component, expanded range of operating temperature for the sensor during operation and high measurement accuracy of pressure sensor during long time of its operation.
2 cl, 1 tbl
Title | Year | Author | Number |
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METHOD OF STABILIZATION OF ELASTIC ELEMENT OF PRESSURE SENSOR WITH TENSORESISTORS | 2014 |
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RU2566538C1 |
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METHOD OF MANUFACTURING OF HEAT-RESISTANT NANO AND MICROELECTROMECHANICAL SYSTEM OF MECHANICAL VALUE TRANSMITTER | 2014 |
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RU2548380C1 |
METHOD OF MAKING THIN-FILM PRECISION RESISTOR | 2022 |
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RU2818204C1 |
MATERIAL FOR MANUFACTURING THIN-FILM RESISTORS AND METHOD FOR PRODUCING RESISTIVE FILM AROUND IT | 2006 |
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RU2323497C1 |
CHIP RESISTOR MANUFACTURING METHOD | 2014 |
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RU2552630C1 |
METHOD FOR PRODUCING HIGH-TEMPERATURE THIN-FILMED RESISTANCE STRAIN GAUGE | 0 |
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SU1820416A1 |
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Authors
Dates
2015-11-20—Published
2014-08-20—Filed