MAGNETIC TUNNEL JUNCTION HAVING POLARISING LAYER Russian patent published in 2016 - IPC G11C11/16 B82Y25/00 

FIELD: physics, computer engineering.

SUBSTANCE: invention relates to computer engineering. A method of making a magnetic tunnel junction to be written with a spin polarised current, the magnetic tunnel junction having a tunnel barrier layer between a first ferromagnetic layer having a first magnetisation with a fixed orientation and a second ferromagnetic layer having a second magnetisation being freely oriented, and a polarising layer having a polarising magnetisation; comprising: depositing the first and second ferromagnetic layers and the tunnel barrier layer; annealing the deposited ferromagnetic layers at a first annealing temperature of 300°C or higher such as the tunnel magnetoresistance of the magnetic tunnel junction is equal to or greater than 150%; depositing the polariser layer; and annealing the deposited polariser layer at a second annealing temperature between 150°C and 250°C so as to orient the polarising magnetisation perpendicular to the first and second magnetisation, said annealing of the deposited ferromagnetic layers at the first annealing temperature being performed prior to depositing the polariser layer.

EFFECT: providing high tunnel magnetoresistance, which is equal to or greater than 150%.

6 cl, 1 dwg