FIELD: computer engineering.
SUBSTANCE: element of random-access memory (MRAM) comprises a magnetic tunnel junction having: memory layer; reading layer; and a tunnel barrier layer enclosed between storage layer and reading layer; memory layer contains a first magnetic layer having a first storage magnetisation; second magnetic layer having a second storage magnetisation; and a non-magnetic binding layer separating first and second magnetic layers so that first storage magnetisation is substantially antiparallel to second storage magnetisation; wherein first and second magnetic layers are configured so that at reading temperature first storage magnetisation is substantially equal to second storage magnetisation; and at write temperature, which is higher than read temperature, second storage magnetisation is greater than first storage magnetisation.
EFFECT: providing low power consumption and increased rate of recording and reading of memory cell.
11 cl, 10 dwg
