HETEROSTRUCTURE FOR AUTO-EMITTER Russian patent published in 2016 - IPC H01J1/34 B82B1/00 

FIELD: physics, computer engineering.

SUBSTANCE: invention relates to auto-emitter structures. An array of nanostructured objects is formed in a heterojunction structure on the surface of an n-layer on the side of an n-p heteroboundary. The p-layer is in the form of a diamond film whose thickness is not greater than the electron diffusion length, and acceptor concentration therein is in the range of 10²⁰-10²⁴ m^-3. In a particular solution, the p-layer is in the form of a plurality of mesa-structures. The heterostructure and its particular solution can be used when designing circuits and microwave power electronic devices.

EFFECT: invention considerably increases operating current of a field radiating cathode, high resistance of devices to degradation and longer service life of devices.

2 cl, 2 dwg