METHOD TO INCREASE DEGRADATION RESISTANCE OF HIGH-CURRENT MULTI-SPIKE FIELD-EMISSION CATHODES Russian patent published in 2013 - IPC H01J1/30 H01J9/02 

Abstract RU 2474909 C1

FIELD: electricity.

SUBSTANCE: synthesis of a material of a multi-spike field-emission cathode is carried out in a plasma of a microwave gas discharge from vapours of carbon-containing substances, for instance, ethanol, in the range of process parameters, in which a transition is realised from deposition of graphite films to deposition of diamond films. The produced composite material represents a graphite matrix with inclusions of nanodiamond crystallites. The matrix of the multi-spike field-emission diode is manufactured in accordance with the technology compatible with the technology of integrated circuits production.

EFFECT: higher mechanical and electric strength, density of field-emission currents and degradation resistance when operating with higher voltages.

2 dwg

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RU 2 474 909 C1

Authors

Jafarov Ravil' Kjashshafovich

Dates

2013-02-10Published

2011-06-01Filed