METHOD FOR INCREASING DENSITY OF FIELD CURRENTS AND SLOPE OF FIELD EMISSION AVCS Russian patent published in 2023 - IPC H01J9/02 B82B1/00 H01J1/30 

FIELD: vacuum plasma electronics.

SUBSTANCE: development and creation of radiation-resistant instruments and devices, the operation of which is based on the use of field sources of electrons.

EFFECT: decrease in the field emission threshold, increase in current density and steepness of the current-voltage characteristics of field electron sources. In a method for increasing the current density and slope of the current-voltage characteristics of field electron sources based on carbon coatings, a three-layer carbon heterostructure is used as an electron emitter, in which, in one vacuum production cycle, an electron-depleted layer with a thickness of 4-6 nm and an upper enriched layer are sequentially deposited on the lower electron-enriched layer, similar to the bottom one, 40-60 nm thick.

2 cl, 1 dwg