FIELD: chemistry.
SUBSTANCE: invention can be used to control technology in making semiconductor metamorphic heterostructures. Invention comprises recording diffraction reflection curves in mode θ/2θ-scanning from different crystallographic planes to measure angular position of peak from selected small region epitaxial layer with gradient of chemical composition and lattice parameters are calculated in different directions based on measured Bragg angles at epitaxial growth of layer with gradient of chemical composition in previously randomly selected small region of this layer a monocrystalline layer with homogeneous composition with thickness of 50-100 nm giving a distinct peak at diffraction reflection curves and not making additional elastic deformation.
EFFECT: technical result is possibility of determining parameters of lattice of metamorphic layer in randomly selected small region of metamorphic layer.
1 cl, 5 dwg
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