EPITAXIAL HETEROSTRUCTURE FOR RED LEDS Russian patent published in 2025 - IPC H10H20/811 

FIELD: lighting.

SUBSTANCE: invention relates to the field of light-emitting diodes (LED), namely to epitaxial heterostructures (HS) for LEDs emitting in the spectral range λ=620-630 nm, which can be used for production of lighting and light signalling devices, as well as in signalling and indication systems in automotive, road, railway and aviation industry, agricultural and architectural lighting, etc. Disclosed is a heterostructure (HS), where on a GaAs substrate of n-type conductivity there is a buffer layer of n-type conductivity, layers of a distributed Bragg reflector, then there are layers of compounds of the proposed compositions containing arsenic, namely n- and p-type emitter layers (EL) – AlInPAs, between which the first and second undoped optical confinement (OC) layers – AlGalnPAs, characterized by a given ratio of the sum of Ga and Al atoms to the In atoms in the solid solution phase at room temperature, Between the OC layers there is an active region (AR) containing at least one quantum well (QW) – GalnPAs; on the p-type conductivity EL there are p-type conductivity layers of a wide-gap GaP window and a GaP contact layer.

EFFECT: high axial light intensity, internal quantum efficiency, external quantum efficiency and efficiency of light-emitting diodes based on the proposed epitaxial HS.

2 cl, 3 dwg, 1 tbl