EPITAXIAL HETEROSTRUCTURE FOR GREEN LIGHT-EMITTING DIODES Russian patent published in 2025 - IPC H10H20/811 

FIELD: electric elements.

SUBSTANCE: invention can be used for creating light-emitting diodes (LED), namely epitaxial heterostructures (HS) for LEDs emitting in the spectral range λ=565-575 nm. Epitaxial heterostructure for light-emitting diodes includes: GaAs substrate of n-type conductivity, GaAs n-type buffer layer, distributed Bragg reflector, first emitter layer of n-type conductivity, active area, second emitter layer of p-type conductivity, p-type GaP wide-gap window layer and GaP contact layer of p-type conductivity, wherein said first and second emitter layers are layers of composition (Al_0.6-_0.64In_0.4-0.36)P_1-AAs_A, at value A, defined in the range of values 0.05≤A≤0.2, undoped layers of optical composition limitation are introduced between them (Al_0.78-0.82Ga_0.22-0.18)_0.6-0.64In_0.4-0.36P_1-BAs_B, at value B, defined in the range of values 0.05≤B≤0.2, and characterized by the ratio of the sum of Ga and Al atoms to the In atoms in the solid solution phase at room temperature, wherein the values of said ratio are in the range of not less than 1.12 and not more than 1.5, between the optical limiting layers there is said active region containing at least one quantum well of composition (Al_0.48-0.52Ga_0.52-0.48)_0.6-0.64In_0.4-0.36P_1-CAs_C at value C, defined in the range of values 0.05≤C≤0.2.

EFFECT: possibility of increasing axial light intensity, internal quantum efficiency, external quantum efficiency and efficiency of light-emitting diodes.

2 cl, 3 dwg, 1 tbl