METHOD FOR EVALUATING THE CRYSTAL STRUCTURE OF NEAR-SURFACE LAYERS OF INDIUM ANTIMONIDE (100) Russian patent published in 2021 - IPC G01N23/20 

FIELD: measuring.

SUBSTANCE: area of application: evaluation of the crystal structure of the near-surface layers of indium antimonide (100).The substance of the invention consists in the fact that x-ray radiation is used, the integral intensity of the reflected x-ray radiation is measured, wherein the integrated intensity of x-ray diffraction peaks of radiation in the vicinity of the point of the reciprocal lattice [220] is measured on an x-ray diffractometer in a monochromatic radiation, reciprocal space maps (RSMs) are built, the quality of polishing in the final stage is evaluated by the value of the difference between the intensity of the diffuse component occurring because of structural damage, and the dynamic component of intensity of x-ray radiation. The evaluation parameter for the degree of structural damage is used, calculated by a predetermined mathematical formula.

EFFECT: technical result is the ensured quality control of the finishing stage of polishing and the evaluation of the degree of damage in the crystal lattice of indium antimonide (100) caused by such polishing.

1 cl, 2 dwg, 2 tbl