METHOD FOR DIAGNOSTICS OF COMPOSITION AND CRYSTALLOGRAPHIC PARAMETERS OF SEMICONDUCTOR EPITAXIAL HETEROSTRUCTURES Russian patent published in 2023 - IPC G01N23/20 

FIELD: semiconductor microelectronics; nanoelectronics.

SUBSTANCE: invention can be used to diagnose the structure and composition of semiconductor epitaxial heterostructures, including modern advanced structures on wide-band nitride materials (AlGaN/GaN, InAlGaN/GaN, etc.) with submicron and nanometre layers and can be used to determine crystallographic parameters and composition of heterostructures for formation of active and passive elements of integrated circuits and discrete devices on them.

EFFECT: in the proposed method, using the AlGaN/GaN heterostructure as an example, instead of the two and three-crystal diffractometers used for this purpose, a single-crystal diffractometer is used, which is much cheaper, does not require high energy costs and special premises, and is easier to set up and operate.

1 cl, 10 dwg, 3 tbl