CMOS-TRANSISTOR WITH VERTICAL CHANNELS AND COMMON GATE Russian patent published in 2014 - IPC H01L27/92 

FIELD: electricity.

SUBSTANCE: two complementary transistors are combined in CMOS-transistor into a compact structure with vertical channels of p- and n-junctions which are located in parallel to each other and have common gate. The gate is isolated from channels by dielectric and shaped in non-conductive area in-between transistors. Sinks of CMOS-transistor channels are interconnected by ohmic conductors at the lower side of structure while sources of transistors have separate outputs at the upper side.

EFFECT: invention allows simplification of structure, decreasing its sizes and increasing operating speed of CMOS-transistor.

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