FIELD: electricity.
SUBSTANCE: invention relates to the field of semiconductor electronics. In the diode with negative differential resistance according to the invention two complementary field transistors are united in uniform vertical structure with parallel channels with forming between them of electric transition, and the source of p-channel is located opposite to n-channel drain, and r-channel drain - opposite to n-channel source. Sources of the channels are interconnected by a conductor and additional zone with n+-type conductivity, where the source of n-type channel is formed, and drains of the channels have separate outputs.
EFFECT: invention allows to reduce dimensions, increase operational speed, current and output power of the diode.
2 cl, 3 dwg
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