FIELD: physics.
SUBSTANCE: semiconductor device with lambda diode characteristics includes two complementary field-effect transistors connected into a single vertical structure with parallel channels between which an electrical junction forms, wherein current in the channels flows in opposite directions. Gates are formed by additional regions on the other lateral side of the channels. The sources of the channels are connected to each other by ohmic contacts on the lower side of the structure. The drain of the n-channel is connected to the gate of the p-channel, and the drain of the p-channel is connected to the gate of the n-channel by two common metal lines. The device can have several single structures, wherein the gates are common for neighbouring structures and channels with the same conductivity type are arranged symmetrically with respect to the gates.
EFFECT: invention enables to reduce the size, increase operating speed and increase current and output power of the device.
3 dwg
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