METAL SEMICONDUCTOR DEVICE Russian patent published in 2015 - IPC H01L29/82 

FIELD: electricity.

SUBSTANCE: invention may be used in different electronic devices intended for amplification and generation of electric signals, besides it may be used for protection of input circuits in electronics from powerful electromagnetic emissions as well as in instruments as a flux density sensor. Current control in the suggested metal semiconductor device is made by means of outer transversal variable or constant magnetic field. The device comprises a thin metal tape through which direct current passes. At upper and lower surfaces of the tape there are p- and n-areas, at that between the tape and p-areas there are formed ohmic contacts, while n-areas serve as collectors, to which reverse voltage is supplied. At impact of transversal magnetic field controlled currents of collectors are generated, which depend on direction and size of the magnetic field.

EFFECT: metal semiconductor device allows increase in output power of the amplifier, and when the device is used as a magnetic field sensor it allows increase in magnetic sensitivity to voltage.

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