DOUBLE-HEADER METAL-SEMICONDUCTOR DEVICE Russian patent published in 2017 - IPC H01L29/82 

FIELD: electricity.

SUBSTANCE: invention can be used in various electronic devices, designed to amplify and generate the electrical signals, to protect the input circuits of electronic equipment from powerful electromagnetic radiation, and also as the magnetic induction sensor. The essence of the invention is in the fact, that in the proposed double-header metal-semiconductor device, the headers are formed only on one side of the metal tape, at that the currents in the tape are passing in opposite directions. The header current is controlled by the external transverse alternating or constant magnetic field.

EFFECT: simplification of the design and device manufacturing process, increase of the amplifier output power, and when using the device as the magnetic field sensor - the magnetic sensitivity according to voltage.

2 cl, 1 dwg