IMAGE FORMING APPARATUS, IMAGE FORMING SYSTEM AND METHOD FOR PRODUCTION OF IMAGE FORMING DEVICE Russian patent published in 2016 - IPC H01L27/146 H01L21/761 

FIELD: information technology.

SUBSTANCE: invention can be used for image formation. This invention consists in that image forming apparatus has a field-effect transistor with p-n junction, arranged on a semiconductor substrate, field-effect transistor with p-n junction includes a first conductivity type, source region of a first conductivity type, a first area of gate of second conductivity type, second area of gate of second conductivity type, third area of gate of second type conductivity and fourth area of gate of second conductivity type first area of gate and second area of gate are located along surface of semiconductor substrate, third area of gate and fourth area of gate are located along surface of semiconductor substrate, first area of gate and third area of gate are located in direction of depth of semiconductor substrate, first area of gate is located between said surface and third area of gate, second area of gate and fourth gate area are located in direction of depth, second area of gate is located between said surface and fourth area gate channel zone includes first area, which is located between first area of gate and third area of gate, and second area, which is located between second area of gate and fourth area gate, source area is located between first area of gate and second area of gate, and second conductivity type semiconductor region, having concentration of impurities that is lower than that of third area of gate, and lower than that of fourth gate area is located between third area of gate and fourth area of gate.

EFFECT: technical result is enabling improvement of characteristics of field-effect transistor with p-n junction.

20 cl, 9 dwg