FIELD: physics.
SUBSTANCE: image forming device includes a plurality of pixels, each of which includes a field effect transistor with a control p-n-junction performed on a semiconductor substrate. A field-effect transistor with a control p-n-junction includes a gate region and a channel region. The gate region and the channel region intersect each other in a top view.
EFFECT: invention makes it possible to reduce the change in the characteristics of a field-effect transistor with a control p-n-junction.
20 cl, 10 dwg
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