METHOD FOR PRODUCING MULTILEVEL THIN-FILM INTEGRATED CIRCUITS Russian patent published in 2005 - IPC

FIELD: microelectronics; multilayer structures on substrates made of various materials.

SUBSTANCE: proposed method includes formation of conductor patters in conductor layers and windows in insulator layers by way of photolithography and production of multilayer integrated circuit from conductor and insulator layers incorporating provision for inter-level commutation in the form of electrical connections obtained in insulator layer windows; integrated circuit is formed by sequential alignment of separate single-level thin-film boards and arrangement of permanent links in windows of insulator layers of these boards combining functions of inter-level commutation and physical fixation (mechanical connection) by means of, for instance, sections of conductor layers placed in relative contact condition provided according to desired layout above windows during formation of conductor patters; if physical strength of integrated circuit is found insufficient, its formation is accompanied by production of permanent links in additional windows of insulator layers to function as physical fixation only, for instance by microwelding conductor layer sections brought in mutual contact, these sections being made according to desired layout during formation of conductor pattern above additional windows without including them in mentioned pattern; in the process integrated circuit is formed through both types of windows whose axes are aligned during alignment of boards; for increasing number of boards being interconnected they are formed through windows whose axes in combined boards are spaced apart to reduce sag in conductor layer sections being connected including formation of permanent links in contacting conductor layer sections made in through windows of intermediate boards according to desired layout. This method is suited for use in production of multilevel integrated circuits with wide range of layer thicknesses and is compatible with commonly used integrated-circuit manufacturing technology.

EFFECT: facilitated manufacture, enhanced degree of integration, enlarged range of items produced, enlarged functional capabilities of method, reduced production expenses due to reduced cost of materials and equipment involved.

2 cl, 8 dwg