FIELD: electronics.
SUBSTANCE: invention relates to electronic engineering and can be used for measurement of thermal parameters of power semiconductor devices and control of their quality. Method of evaluating thermal parameter of power semiconductor instruments includes measurement of the parameter of power solid-state device during its heating with high current. Single power current pulse of an arbitrary shape with amplitude passes through power semiconductor device, wherein amplitude of the former is close to the maximum value allowable for this power semiconductor device and its duration is one-tens of ms, sufficient for heating of the semiconductor structure. During heating loop width of thermal hysteresis of direct current-voltage characteristics of power semiconductor device is measured. Also disclosed is a device for measuring loop width of thermal hysteresis of direct current-voltage characteristics of power semiconductor device.
EFFECT: invention allows to reduce time of assessing thermal parameter of power semiconductor device, and simplify the process and design implementation of the measuring device.
2 cl, 2 dwg
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