METHOD OF MEASURING TRANSIENT THERMAL CHARACTERISTICS OF SEMICONDUCTOR PRODUCTS Russian patent published in 2017 - IPC G01R31/26 

FIELD: measuring equipment.

SUBSTANCE: semiconductor product is warmed up by feeding a semiconductor product connected to the power supply to the input (to certain terminals), a sequence of rectangular voltage pulses of a specified amplitude and duration with a repetition frequency ƒ_rep, the average voltage P_con is measured over the period of following the rectangular pulses, consumed by the semiconductor product, the phase difference between the input impulse voltage and the impulse voltage at the output (at the output terminals) of the semiconductor product is converted into the voltage U_τ(t), at the given time t_i of the voltage value U_τ(t), the values of the transient thermal characteristic of the semiconductor article at the time t_i is determined by the formula , where K_τ - the relative temperature coefficient of the signal delay time in the semiconductor product, and U_τ(0) - the value of the voltage U_τ(t) at the beginning of heating the semiconductor product, that is at t₀≈0.

EFFECT: providing the possibility of increasing the accuracy of measuring the transient thermal characteristics of semiconductor products.

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