METHOD FOR AUTOMATED MONITORING OF THERMAL RESISTANCES OF SEMICONDUCTOR DEVICES Russian patent published in 2019 - IPC G01R31/26 

FIELD: physics.

SUBSTANCE: invention can be used for automated control of thermal resistance of different diodes, transistors, pulse converters and other semiconductor devices having p-n junctions with their structure. Essence of the invention consists in the fact that the method for automated monitoring of thermal resistance of semiconductor devices, comprising steps of removing dependence on temperature of forward voltage on the p-n junction at low measurement current, heating of the device with rated current to the established thermal mode, measurement of housing temperature and after heating current shutdown measurement of forward voltage at low measurement current, determining transient thermal characteristic and thermal resistance of one reference semiconductor device from batch of instruments to be controlled, approximating the transient thermal characteristic by two exponentials, calculating the time of further measurements equal to half the lower thermal time constant t_izm=0.5τ and calibrating tester, on which whole batch of instruments will be tested, for this purpose, direct voltage is measured at the p-n junction at low measurement current before and after switching on the reference device on the tester in nominal heating mode for the calculated time t_izm=0.5τ and stored in the tester memory as reference values: heating duration, heating and measuring current values and difference of measured voltages on the p-n junction; then controlling all devices of this lot, for this purpose measuring direct voltage at p-n junction at low measurement current before and after switching on of each device on tester in nominal heating mode for calculated time t_izm=0.5τ and comparing difference of measured voltages with difference of reference voltages.

EFFECT: enabling reduction of thermal resistance monitoring time.

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