METHOD OF MAKING THIN LAYERS OF OXIDES OF Ni, Nb WITH HOLE CONDUCTIVITY FOR MAKING COMPONENTS OF VERY LARGE SCALE INTEGRATED CIRCUITS Russian patent published in 2016 - IPC H01L21/285 

FIELD: electricity.

SUBSTANCE: invention relates to electronic engineering and describes obtaining hole conductivity of an amorphous oxide film on the surface of a metal glass of Ni-Nb system by artificial oxidation. Method of making thin layers of oxides of Ni and Nb with hole conductivity for making components of very large scale integrated circuits provides for production of a thin amorphous film of the composition described by formula Nb_xNi_100-x (where x=40-60 wt%) by magnetron sputtering onto a copper water-cooled substrate at the rate of 50 nm/min at the magnetron power of 70 W and subsequent production of the composition in the thin film described by formula Nb_xNi_100-x (where x=40-60 wt%), hole conduction by annealing in an oxidizing atmosphere at the temperature of 200-300 °C during 30-60 minutes.

EFFECT: proposed is a method of making thin layers of oxides of Ni and Nb with hole conductivity.

1 cl, 4 dwg