METHOD OF MAKING NIOBIUM OXIDE-BASED DIODE Russian patent published in 2012 - IPC H01L21/329 B82B3/00 

FIELD: physics.

SUBSTANCE: invention relates to microelectronics. The method of making a niobium oxide-based diode involves forming a lower conducting electrode, a rectifying electrical junction and an upper conducting electrode. The rectifying electrical junction used is a 40-100 nm thick niobium oxide layer with an upper electrode which enables to form a Schottky barrier. The niobium oxide layer is obtained by oxidising the lower electrode which consists of niobium metal. The upper conducting electrode used is metals with a work function higher than 5.1 eV: Ni, Au, Pt, Pd.

EFFECT: invention reduces back current density and increases the ratio of direct to back current by up to seven orders and also enables to use simpler and cheaper low-temperature technology of producing oxide layers, which reduces the cost of making oxide-based diodes.

2 cl, 2 dwg