FIELD: laser engineering.
SUBSTANCE: laser surface emission element includes semiconductor substrate and plurality of surface emission lasers, configured with possibility to emit light with mutually different wavelengths. Each surface emission laser includes lower Bragg reflector, arranged on semiconductor substrate, resonator, arranged on lower Bragg reflector, upper Bragg reflector, arranged on resonator, and wave length adjustment layer, arranged inside upper Bragg reflector or lower Bragg reflector. Wave length adjustment layers included in surface emission lasers, have mutually different thicknesses, wherein, at least one of wave length adjustment layers includes control layers, formed from two types of materials, and number of control layers, included in wave length adjustment layers, is mutually differ.
EFFECT: technical result consists in possibility to adjust device emitted wave length.
14 cl, 24 dwg
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