SEMICONDUCTOR ELEMENT, MANUFACTURING METHOD OF SEMICONDUCTOR ITEM, AND MATRIX OF LIGHT-EMITTING DIODES, WHICH IS OBTAINED BY USING SUCH MANUFACTURING METHOD Russian patent published in 2011 - IPC H01L33/34 

FIELD: electricity.

SUBSTANCE: manufacturing method of semiconductor item having composite semiconductor multi-layer film formed on semiconductor substrate, according to invention, involves the following: preparation of element including layer (1010) removed by etching, composite semiconductor multi-layer film (1020), insulating film (2010) and semiconductor substrate (2000) on composite semiconductor substrate (1000), and having the first groove (2005) which passes through semiconductor substrate and insulating film, and groove (1025) in semiconductor substrate, which is the second groove provided in composite semiconductor multi-layer film so that it is connected to the first groove, and etching agent contacts the layer removed by etching as to the first groove and the second groove, and thus, removed layer is etched to separate composite semiconductor substrate from the above element.

EFFECT: increasing yield ratio and simplifying manufacturing procedure.

28 cl, 15 dwg