FIELD: technological processes.
SUBSTANCE: invention relates to production of silicon compounds, namely fluorosilane suitable for generation of monosilane in order to be used in microelectronics industry as raw material for production of high-purity polycrystalline silicon. Monosilane formation method includes plasma-hydrogen treatment of silicon tetrafluoride in all-metal microwave reactor using electromagnetic wave H11 with advancing of formed fluorosilanes mixture and hydrogen fluoride through layer of heated sodium fluoride.
EFFECT: invention increases output of monosilane during plasma-hydrogen conversion of silicon tetrafluoride to 82-90 % with simultaneous increase of explosion safety of production due to exclusion of excessive hydrogen in initial mixture.
1 cl, 2 dwg, 2 ex
| Title | Year | Author | Number |
|---|---|---|---|
| MICROWAVE PLASMATRON | 2015 |
|
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|
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|
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