FIELD: power industry.
SUBSTANCE: invention relates to the semiconductor electronics and can be used to produce solar cells. Metamorphic phototransformator includes a substrate (1) of GaAs, metamorphic buffer layer (2) and at least one photoactive p-n-junction (3), made of InGaAs and comprising a base layer (4) and the emitter layer (5), a layer (6) of the wide windows of In(AlxGa1-x)As, where x=0.2-0.5, and a contact sublayer (7) of InGaAs.
EFFECT: invention has increased the value of the photocurrent and the efficiency.
6 cl, 4 dwg
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Authors
Dates
2017-02-28—Published
2015-12-09—Filed