UHF PHOTODETECTOR OF LASER RADIATION Russian patent published in 2018 - IPC H01L31/101 

FIELD: electrical engineering.

SUBSTANCE: invention relates to semiconductor devices used in electronics. Microwave photodetector of laser radiation consists of a substrate 1 made of n-GaAs, and consecutively besieged: the rear potential barrier layer 2 n-Al_0.2Ga_0.8As, a base layer made of n-GaAs 3, with a thickness of 50–100 nm, a non-conductive i-GaAs 4 layer with a thickness of 1 mcm and a p-GaAs 5 emitter layer with a thickness of 900–1,000 nm with an increase in the level of doping with a fine acceptor impurity from the boundary with the nonconducting layer to the opposite boundary, the sum of the thicknesses of the base, nonconducting, and emitter layers being from 1.95 to 2.1 mcm.

EFFECT: invention provides the possibility of creating a microwave photodetector of laser radiation with high speed and absorption of at least 80 % of photons with a wavelength in the range of 800–860 nm.

3 cl, 4 dwg