SEMICONDUCTING LASERS MANUFACTURING METHOD Russian patent published in 2018 - IPC H01S5/10 

FIELD: physics.

SUBSTANCE: semiconductor lasers manufacturing method comprises the steps, at which splitting the laser heterostructure into the semiconductor lasers lines in the external atmosphere, providing the resonator edges, onto the working vacuum chamber inner surface sputtering the aluminum layer with thickness of not less than 50 nm, placing at least one of the semiconductor laser line or crystal in the vacuum chamber with the residual pressure by oxygen of not more than 2⋅10^-10 Torr, where the resonator edges are first etched with the argon plasma ions at the rate of no more than 2 nm/min to the depth of at least 3 nm. Then on the resonator edges creating a passivating nitride layer AlN at a rate of (12.0–12.5) nm/min and with thickness of at least 5 nm by the aluminum target sputtering using the plasma containing nitrogen, at zero potential at the semiconductor laser samples. On the resonator edges above the AlN passivating nitride layer applying the reflective and antireflection coatings.

EFFECT: method enables increase in the output mirrors optical strength and output optical power, increase in the semiconductor lasers service life.

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