FIELD: chemistry.
SUBSTANCE: substrate - a X-cut-off of piezoelectric crystal, e.g., La3Ga5.5Ta0.5O14, with planes (110) parallel to the crystal surface is placed into a quartz reactor. The reactor is pumped out to 10-3-10-8 Torr and heated up to 900-1450°C. The reactor then filled with carbon gases, e.g. acetylene, methane or ethylene, to achieve pressure of 10-10-1 Torr. After 15-100 min. the reactor is pumped out again to achieve pressure of 3·10-6 Torr while cooling it down to the room temperature.
EFFECT: process simplification, temperature reduction, production of uniform high-quality graphene films.
5 cl, 2 dwg, 3 ex
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