METHOD OF PRODUCING GRAPHENE-BASED HETEROSTRUCTURES Russian patent published in 2024 - IPC H01L21/04 B82Y30/00 B82Y40/00 

FIELD: nanotechnology.

SUBSTANCE: essence of the invention consists in the fact that on the oxidized surface of the substrate there is applied a layer of aluminium, on which a film of a catalyst from Fe, consisting of islands, is applied, and annealed in air at temperature of 700 °C, and synthesis of the heterostructure is carried out in a quartz reactor, on the inner surface of which a porous carbon film is deposited, substrate is placed in a cooled reactor, the reactor is evacuated to pressure of 10^-6 Torr and quickly heated to temperature of 850-950 °C when forming an atmosphere which is conducive to synthesis of a heterostructure, holding the substrate at this temperature for 30-60 minutes and quickly cooling the reactor to room temperature at rate of 70-100 °C/min.

EFFECT: according to the invention, a heterostructure is obtained from a graphene film and nanowalls, has high electrical resistance and sensitivity to electromagnetic radiation.

6 cl, 5 dwg