FIELD: technological processes.
SUBSTANCE: invention relates to production of two-dimensional ferromagnetic materials EuGe2 or GdGe2, which can be used in creation of compact spintronic devices. Method for producing 2D germanene-based EuGe2 and GdGe2 ferromagnetic materials involves precipitation of an atomic flow of europium with pressure PEu=(0.1÷100)⋅10-8 Torr or gadolinium with pressure PGd=(0.1÷10)⋅10-8 Torr on Ge(111) pre-cleaned substrate surface, heated to 290 °C<Ts<510 °C for europium or 400 °C<Ts<510 °C for gadolinium, to formation of a europium germanide film with thickness of not more than 5 nm or a gadolinium germanide film with thickness of not more than 13 nm with subsequent optional annealing of obtained films to temperature not exceeding Ts=530 °C.
EFFECT: invention enables to perform topotactic synthesis of two-dimensional ferromagnetic EuGe2 or GdGe2 films of crystalline modification of hP3 with a structure of intercalated europium or gadolinium of multilayer germanene on germanium substrates; produced films do not contain extraneous phases and contain germanene layers parallel to substrate surface.
1 cl, 6 dwg, 4 ex
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Authors
Dates
2020-06-02—Published
2019-11-20—Filed