FIELD: radio engineering.
SUBSTANCE: result is ensured by introducing into the gallium arsenide operational amplifier circuit the third and fourth reference current sources, as well as additional bipolar transistors, wherein base of first additional bipolar transistor is connected to collector of first output bipolar transistor of intermediate stage and to third source of reference current, base of the second additional bipolar transistor is connected to the collector of the second output bipolar transistor of the intermediate stage, collector of the second additional bipolar transistor is connected to the input of the buffer amplifier and to the fourth reference current source, combined emitters of additional transistors are connected to bases of the first and second output transistors of intermediate stage and connected to additional resistor and parallel connected p-n-junctions.
EFFECT: design of a precision operational amplifier circuit with a low level of a systematic component of zero offset voltage and high voltage gain within the combined GaAs process, which enables to use only p-n-p-bipolar and nJFet field-effect transistors.
4 cl, 7 dwg
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Authors
Dates
2024-06-03—Published
2023-12-26—Filed