LOW OFFSET GALLIUM ARSENIDE OP AMP Russian patent published in 2024 - IPC H03F3/45 

FIELD: radio engineering.

SUBSTANCE: operational amplifier is proposed, into which an additional bipolar transistor (18), a first (19) and a second (20) elementary reference current source are introduced, each of which is made on the first (21) additional field-effect transistor, the first (22) additional resistor, the second (23) additional field-effect transistor, the third (24) additional field-effect transistor, the fourth (25) additional field-effect transistor, the third (26) auxiliary resistor, the fifth (27) additional field-effect transistor, the fourth (28) auxiliary resistor.

EFFECT: creating an operational amplifier circuit, which is implemented within the framework of a combined GaAs process, allowing the creation of only pnp bipolar and nJFet field-effect transistors, as well as the development of an op-amp circuit with a low level of the systematic component of the zero bias voltage without the use of current mirrors on npn or nJFet transistors.

5 cl, 7 dwg