FIELD: physics.
SUBSTANCE: invention relates to the technology of assembling hybrid matrix photodetector devices (MFPs). One of the main operations in the manufacture of MFPs is the assembly of crystals into the case, followed by the connection of the contact areas of the LSI crystal with the outer terminals of the MFPA housing. Such an electrical connection is usually carried out with the help of gold wires that are welded to the corresponding contacts. The method of assembling MFPA crystals involves applying a layer of metal to a dielectric raster, forming a pattern of conductive busbars and contact pads, applying an insulating coating and attaching the crystal to the raster, a silicon washer is used to make the raster, the grooves on the surface are etched with depths greater than the thickness of the metallization layer and wider than the width metallization tires, conduct a deep oxidation of the silicon surface, apply a metallization layer and form a conductive wiring pattern so that the metallized the tires and pads were located on the bottom of etched grooves.
EFFECT: increasing the reliability of assembly of crystals of matrix photodetector devices by excluding the possibility of short-circuiting the crystal with metallized tires.
2 dwg
Title | Year | Author | Number |
---|---|---|---|
PROCESS OF MANUFACTURE OF SEMICONDUCTOR DEVICES | 1989 |
|
SU1702825A1 |
METHOD OF OBTAINING FOR SEMICONDUCTOR SILICON STRUCTURES | 0 |
|
SU1160895A1 |
METHOD OF ASSEMBLING PHOTOSENSITIVE MODULE ON RASTER | 2015 |
|
RU2580184C1 |
INTERPOSER AND METHOD OF MAKING SAME | 2014 |
|
RU2584575C1 |
METHOD OF MAKING MICROSYSTEM FOR DETECTING THREE MAGNETIC INDUCTION VECTOR COMPONENTS | 2010 |
|
RU2470410C2 |
METHOD OF MAKING HOUSING BASED ON CHIP DIMENSIONS | 2008 |
|
RU2410793C2 |
METHOD OF FORMATION OF MULTILEVEL METALLIZATION SYSTEM BASED ON TUNGSTEN FOR HIGH-INTEGRATED CIRCUITS | 2015 |
|
RU2611098C1 |
MEMS DEVICES SEALING METHOD | 2017 |
|
RU2662061C1 |
METHOD OF PRODUCING CRYSTALS FOR SEMICONDUCTOR DEVICES | 0 |
|
SU1102433A1 |
METHOD OF OBTAINING CRYSTALS FOR SEMICONDUCTOR STRUCTURES | 0 |
|
SU1050475A1 |
Authors
Dates
2017-05-15—Published
2016-07-19—Filed