FIELD: electricity.
SUBSTANCE: current is selected as a current-carrying copper foil with a rough surface that is placed in the thin-film deposition chamber by atomic-layer deposition and dried under vacuum for 1-3 hours, then at a temperature of 150-250°C by means of the atomic-layer deposition method, a single atomic layer of tin (IV) oxide is used, using tetraethyl tin. Next, a pulse heat treatment is carried out at a temperature of 300-325°C for 0.05-0.1 s, and the process is repeated until the thickness of the single-crystal thin-film anode is 100-200 nm. Such a short heat treatment time allows each bond layer of SnO2 to be structured with formation of a single-crystal structure.
EFFECT: increase in the cyclic stability of the anode while maintaining its high specific capacity and a single-crystal defect-free structure.
1 dwg, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF PRODUCING A THIN FILM CATHODE | 2016 |
|
RU2623104C1 |
| METHOD FOR MANUFACTURING A TIN-BASED ANODE OF A LITHIUM-ION BATTERY | 2022 |
|
RU2795516C1 |
| METHOD FOR PRODUCING THIN-FILM COATING BASED ON INDIUM TIN OXIDE | 2023 |
|
RU2808498C1 |
| METHOD OF OBTAINING FILMS OF POROUS CRYSTALLINE TIN DIOXIDE | 2018 |
|
RU2671361C1 |
| METHOD FOR PRODUCING NANOCOMPOSITION POWDER ANODE MATERIALS FOR LITHIUM-ION ACCUMULATORS | 2016 |
|
RU2634561C1 |
| TECHNOLOGY FOR CREATING A MAGNETICALLY CONTROLLED MEMRISTOR BASED ON TITANIUM DIOXIDE NANOTUBES | 2021 |
|
RU2756135C1 |
| THIN-FILM NANOSTRUCTURED ELECTRODE MATERIAL AND METHOD OF PRODUCING SAID MATERIAL | 2009 |
|
RU2414771C1 |
| METHOD FOR PRODUCING ELECTRODE COATINGS FOR OPTOELECTRONIC DEVICES BASED ON HALIDE PEROVSKITES | 2022 |
|
RU2797895C1 |
| METHOD OF MAKING VACUUM SENSOR BY NANO STRUCTURE BASED ON MIXED SEMICONDUCTOR OXIDES AND VACUUM SENSOR BASED THEREON | 2015 |
|
RU2602999C1 |
| METHOD TO MANUFACTURE VACUUM SENSOR WITH 3D POROUS NANOSTRUCTURE AND VACUUM SENSOR ON ITS BASIS | 2014 |
|
RU2555499C1 |
