FIELD: instrumentation.
SUBSTANCE: method to manufacture a vacuum sensor with a 3D porous nanostructure consists in the fact that a heterostructure from various materials, in which they form a thin-film semiconductor resistor, afterwards it is fixed in the sensor body, and contact sites are connected with body leads with the help of contact conductors. A thin-film semiconductor resistor is formed as a 3D porous nanostructure (SiO2)40%(SnO2)50%(ZnO)10% by application of a sol of orthosilicic acid, containing tin and zinc hydroxide, onto a silicon substrate with the help of a centrifuge and subsequent annealing, which is prepared in two stages, at the first stage they mix tetraethoxysilane and ethyl alcohol, then at the second stage into the received solution they add distilled water, hydrochloric acid and tin chloride dihydrate (SnCl2·2H2O), and also additionally add zinc chloride (ZnCl2).
EFFECT: increased sensitivity of a produced vacuum sensor.
3 cl, 3 dwg
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