METHOD OF MAKING VACUUM SENSOR BY NANO STRUCTURE BASED ON MIXED SEMICONDUCTOR OXIDES AND VACUUM SENSOR BASED THEREON Russian patent published in 2016 - IPC G01L21/12 B82B3/00 

FIELD: gas industry.

SUBSTANCE: invention relates to diluted gas pressure sensors, as well as methods of said sensors making. Method of pressure sensors making includes formation of heterostructure, producing of thin-film semiconductor resistor in it, having shape of netted nano structure (SiO₂)_{50 %-c}(SnO₂)_{50 %}(In₂O₃)_c (where c is In₂O₃ mass fraction, 1 %≤c≤15 %), securing of said heterostructure in sensor housing, and connection of heterostructure contact pads with housing outputs by contact conductors. Pressure sensor manufactured in compliance with proposed method, includes in its structure housing, installed in it thin-film heterogeneous structure with thin-film semiconductor resistor formed in it, contact sites, which formed in heterogeneous structure, housing outputs and contact conductors connecting contact pads with housing outputs.

EFFECT: technical result of invention consists in increase of pressure sensor sensitivity when performing measurements in low vacuum area.

2 cl, 8 dwg