FOUR-WAY MIRROR-SYMMETRICALLY STRUCTURE, PROTECTING FROM ULTRASHORT IMPULSES Russian patent published in 2017 - IPC H04B1/10 

FIELD: radio engineering, communication.

SUBSTANCE: protection device consists of three equal and rectangular in cross section conductors at the dielectric layer, at that the first and the second conductors are located at one its side and the third one centered between them, characterized in that the two additional conductors are arranged mirror-symmetrically with respect to the first and the second conductors on the reverse side of the dielectric layer, the third conductor is disposed in the dielectric layer at equal distances from the outer conductors, the thickness and the relative permittivity of the dielectric layer are equal 1.105 mm and 5, the width of all conductors are the same and equal to 0.3 mm, the thickness of the conductors is equal to 105 microns, the distance between the conductors is equal to 0.4 mm, at both ends of the device the resistors with 92 Ω resistance are connected between the second and the third conductors, and also between two additional and the third conductors, the value of the minimum difference modulus of the line mode linear delay, multiplied by the line length is not less than the sum of the front duration, the flat top and the impulse droop, supplied between the first and the third conductors.

EFFECT: increased depletion of the ultrashort impulses due to the decomposition of the ultrashort impulse into impulses of smaller amplitude and the device parameters choice.

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