CONSTRUCTION OF THIN-FILM SOLAR MODULE AND METHOD OF ITS MANUFACTURE Russian patent published in 2018 - IPC H01L31/76 H01L31/18 H01L31/20 C23C16/513 

FIELD: photoconverter.

SUBSTANCE: invention relates to structure of two-stage thin-film solar module (photoconverter) based on amorphous and microcrystalline silicon. Thin-film solar module consists of successively arranged: front glass substrate, front contact layer of a transparent conductive oxide, a sublayer of non-stoichiometric p-type silicon carbide, amorphous and microcrystalline cascades connected in series. Amorphous cascade consists of a p-layer based on a layer of silicon nanoparticles in a matrix of hydrogenated non-stoichiometric silica, doped with boron (nc-Si/SiO_x:H), which is a wide window, its own layer based on amorphous hydrogenated silicon (a-Si:H) and n-layer based on a layer of silicon nanoparticles in a matrix of hydrogenated non-stoichiometric silicon oxide doped with phosphorus (nc-Si/SiO_x:H), which is an intermediate reflector. Microcrystalline cascade consists of a pin structure based on microcrystalline silicon (uc-Si:H), back contact layer of a transparent conductive oxide, longitudinal and transverse electrical contact bars, a rear reflector, which performs the sealing function, installed with the rear glass and the switch box. Method of manufacturing a thin film solar module comprises applying a layer of a transparent conductive oxide to the front glass substrate, deposition of non-stoichiometric silicon carbide sublayer by plasma-chemical deposition from the gas phase in a silane-hydrogen plasma, Amorphous cascade is deposited on a sublayer by the method of plasma-chemical deposition from the gas phase. Layer of microcrystalline cascade is applied to the layer of the amorphous cascade, then a back contact layer is applied from the transparent conductive oxide, after which longitudinal and transverse electric buses are applied, on top of which a back reflector is provided which performs a sealing function, on which the rear glass and the switch box are installed.

EFFECT: reduction in photodegradation is achieved with decrease in the thickness of the intrinsic layer of amorphous silicon, an increase in the stabilized efficiency, an increase in quantum efficiency due to a decrease in absorption losses.

7 cl, 1 dwg