SEMICONDUCTOR PLATE AND METHOD OF ITS MANUFACTURE Russian patent published in 2017 - IPC B06B1/02 H01L21/76 

Abstract RU 2627282 C2

FIELD: electricity.

SUBSTANCE: in a plate subdivided and separable into a plurality of crystals, each crystal comprises of an array of cells of a microprocessed capacity transducer. Each cell includes a substrate comprising of the first electrode, a membrane containing the second electrode and a cavity between the substrate and the membrane. Each cell of at least a portion of the crystals contains a compensating plate on the membrane, with each compensating plate having a configuration for influencing the deflection (h) of the membrane.

EFFECT: ensured possibility of uniform deflection of the membrane and increased yield of suitable products.

15 cl, 16 dwg

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RU 2 627 282 C2

Authors

Dirksen Peter

Dates

2017-08-04Published

2013-05-30Filed