FIELD: electricity.
SUBSTANCE: one embodiment of the invention includes a semiconductor device comprising a redistribution layer (RDL layer) including a relief wiring of the redistribution layer having two side walls of the redistribution layer. A redistribution layer, comprising a material, is selected from the group consisting of Cu (copper) and Au (gold), protective side walls directly contacting these two side walls of the redistribution layer, a seed layer including this material, and a barrier layer. Thus, (A) conductive path of the redistribution layer has a width of the redistribution layer conductor that is orthogonal to and extending between these two side walls of the redistribution layer, and (b) the seed and barrier layers each include a width parallel to the width of the wiring path of the redistribution layer and wider than this width. Other embodiments of the invention are also presented herein.
EFFECT: saving the redistribution wirings that have a shallow step.
23 cl, 9 dwg
