FIELD: physics.
SUBSTANCE: method of forming a magnetic tunnel junction (MTJ) device involves forming a trench in a substrate; depositing a MTJ structure inside the trench, wherein the MTJ structure includes a bottom electrode, a fixed layer, a tunnel barrier layer, a free layer and a top electrode; and applying a reverse photoetching process to remove material which does not directly protrude from the trench; planarising the MTJ structure without performing a photoetching process on the MTJ structure. Two more versions of the present method are also disclosed.
EFFECT: simple manufacturing process, preventing erosion of the substrate, rounding of corners and undesirable washing-off of the film.
19 cl, 25 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF FORMING MAGNETIC TUNNEL JUNCTION DEVICE | 2009 |
|
RU2461082C2 |
| CMOS/SOI MRAM MEMORY INTEGRATED WITH VLSI AND METHOD FOR PRODUCTION THEREOF (VERSIONS) | 2012 |
|
RU2532589C2 |
| MAGNETIC TUNNEL JUNCTION CELL HAVING MULTIPLE MAGNETIC DOMAINS | 2009 |
|
RU2463676C2 |
| METHOD OF FORMING MAGNETORESISTIVE MEMORY ELEMENT BASED ON TUNNEL JUNCTION AND STRUCTURE THEREOF | 2012 |
|
RU2522714C2 |
| METHOD FOR CREATING SELF-ORIENTED MAGNETIC SENSOR | 2021 |
|
RU2753803C1 |
| MEMORY CELL AND METHOD OF FORMING MAGNETIC TUNNEL JUNCTION (MTJ) OF MEMORY CELL | 2009 |
|
RU2469441C2 |
| MAGNETIC TUNNEL JUNCTION DEVICE WITH SEPARATE READ AND WRITE PATHS | 2008 |
|
RU2453934C2 |
| DATA STORAGE AND PROCESSING DEVICE AND ITS MANUFACTURING PROCESS | 1999 |
|
RU2208267C2 |
| SEMICONDUCTOR MEMORY DEVICE | 2014 |
|
RU2642960C2 |
| MAGNETOELECTRIC MEMORY | 2011 |
|
RU2573207C2 |
