FIELD: physics.
SUBSTANCE: invention relates to method and apparatus for magnetron sputtering of material from a target surface in such a way that a high percentage of sputtered material is provided in form of ions. Method includes generating a plasma discharge with a discharge current density greater than 0.2A/cm. Method uses at least two magnetron sputtering sources with preset tolerable heating temperature and preset sputtering zone. Power supply unit is used, which includes at least two generators, which are connected to each other in a Master-Slave configuration. Outputs of said generators are connected in parallel, and slave generators are connected to master generator by control system. Supplied power is controlled on master generator. At second source power is supplied from corresponding generator after disconnection of power supply to first source.
EFFECT: during disconnection sputtered target is able to cool down, so that its temperature limit is not exceeded.
6 cl, 6 dwg
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