METHOD OF SINGLE-CRYSTAL GROWTH AND DEVICE FOR ITS IMPLEMENTATION Russian patent published in 2017 - IPC B23K26/00 B23K26/12 B23K26/144 B23K26/342 B23K26/08 C30B13/00 C30B13/24 

FIELD: technological processes.

SUBSTANCE: method of single-crystal growth comprises supplying directed flow of gas-powder mixture from a device nozzle on a substrate with simultaneous melting of powder material of the gas-powder mixture on the substrate by a laser beam and moving the nozzle relative to the substrate, wherein in the process of welding the nozzle is moved relative to the substrate with a crystalliser with simultaneous lifting and the direction of its inclination angle or position in space is changed in such a way that infinitely continuous growth of single-crystal and predetermined change in its growth direction are carried out, wherein the process is carred out at the flow speed of the gas-powder mixture of 1-50 g/min, the linear speed of the laser beam movement of 0.1-50 mm/s, the laser radiation power of 0.5-10 kW and the nozzle displacement speed relative to the substrate of 0.001-30 m/s. The method is carried out in the device containing a laser unit, a nozzle 1 with an inlet branch pipe for supplying the gas-powder mixture 6 onto the substrate 4 and a fibre cable connected to the laser unit for transportation of the laser beam 7, a table 3 for positioning the substrate 4, a driving system for mutual displacement of the nozzle body relative to the table surface with the substrate 4. The device is provided with a crystalliser 2 located below the outlet of the nozzle 1 and representing a water-cooled branch pipe with at least one offset connected to the surface of the substrate.

EFFECT: obtaining single-crystal products or products with directed crystals in the structure without size limitation, with a given orientation and form of a single-crystal.

2 cl, 1 dwg