METHOD FOR MANUFACTURING ALGAN - HETEROSTRUCTURES FOR SOLAR-BLIND PHOTOCATHODES IN THE UV RANGE Russian patent published in 2022 - IPC H01L31/304 

FIELD: semiconductor optoelectronics.

SUBSTANCE: present invention relates to the field of semiconductor optoelectronics. The method for manufacturing AlGaN heterostructures for solar-blind photocathodes in the ultraviolet range includes annealing a sapphire substrate at a temperature of (800-850) °C, nitriding the surface of a sapphire substrate in an activated nitrogen flow at a temperature of T_S=(780-820)°C, sequential growth by plasma-activated molecular beam epitaxy of an AIN seed layer in the epitaxy mode with increased atomic migration at a temperature of T_S= (780-820)°C with a thickness of (60-130) nm, an AIN buffer layer in the mode of metal-modulated epitaxy in weak metal-enriched conditions at a ratio of aluminum and nitrogen fluxes F^N F^Al/F^N=1.05 with a thickness of 1-2 mcm and an AlGaN active layer doped with Mg in a metal-enriched mode with a continuous change in the aluminum content in the layer from 80 to 37% of the thickness (90- 160) nm at a temperature of (680-700)°C by reducing the aluminum flux during growth at a constant ratio (F^Al + F^Ga)/FN of the fluxes of metals (F^Al, F^Ga) and nitrogen.

EFFECT: development of a method for manufacturing AlGaN - a heterostructure for solar-blind photocathodes in the ultraviolet spectral range, which would provide high sensitivity in the spectral wavelength range less than 290 nm.

1 cl, 2 dwg