SYSTEM AND METHOD OF MONITORING WORKING CONDITION OF IGBT DEVICE IN REAL TIME Russian patent published in 2017 - IPC G01R31/26 

FIELD: physics.

SUBSTANCE: system for determining the temperature of the semiconductor junction of the IGBT device includes a differentiating unit (21) for receiving the characteristics of the voltage (VGE) gate-emitter of the IGBT device (12), which must be measured, and to differentiate the characteristics of the voltage (VGE) gate-emitter to receive pulses that correlate with the fronts generated by the phase plot of the charge capacity of Miller during the off phase of the IGBT device (12); a timer unit (23) for measuring the time delay (t_delay) between the received pulses indicating the beginning and the end of the phase plot of the charge capacity of Miller during the off phase of the IGBT device (12); a unit (25) calculating the temperature of the semiconductor junction to determine the temperature of the semiconductor junction of the IGBT device (12) based on the measured time delay (t_delay). This system implements the appropriate method for determining the temperature.

EFFECT: temperature display with high accuracy and high temporal resolution.

9 cl, 6 dwg